Search for Topics All Reviews
	Browse All Reviews > Hardware (B) > Memory Structures (B.3) > Semiconductor Memories (B.3.1) > Static Memory (SRAM) (B.3.1...)     Options: All Media Types Journals Proceedings Div Books Whole Books Other Date Reviewed Title Author Publisher Published Date Descending Ascending     1-2 of 2 Reviews about "Static Memory (SRAM) (B.3.1...)": Date Reviewed   ADOFs and resistive-ADOFs in SRAM address decoders: test conditions and March solutions Dilillo L., Girard P., Pravossoudovitch S., Virazel A., Borri S., Hage-Hassan M. Journal of Electronic Testing: Theory and Applications 22(3): 287-296, 2006.  Type: Article The title of this paper says it all. The paper examines address decoder open faults (ADOFs) and resistive-ADOFs (not quite open, but where an unexpected resistance is present). Circuit simulations determine conditions that are sufficie... Dec 13 2006   Low-leakage asymmetric-cell SRAM Azizi N., Najm F., Moshovos A. IEEE Transactions on Very Large Scale Integration (VLSI) Systems 11(4): 701-715, 2003.  Type: Article This work introduces a new cache (static random access memory (SRAM)) memory cell, composed of asymmetric transistors, and intended to reduce leakage current, and, consequently, power dissipation.... Mar 10 2004
	Reproduction in whole or in part without permission is prohibited.   Copyright 1999-2024 ThinkLoud® Terms of Use | Privacy Policy