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	Azizi, Navid     Options: All Media Types Journals Proceedings Div Books Whole Books Other Date Reviewed Title Author Publisher Published Date Descending Ascending Date Reviewed     1 - 1 of 1 reviews       Low-leakage asymmetric-cell SRAM Azizi N., Najm F., Moshovos A. IEEE Transactions on Very Large Scale Integration (VLSI) Systems 11(4): 701-715, 2003.  Type: Article This work introduces a new cache (static random access memory (SRAM)) memory cell, composed of asymmetric transistors, and intended to reduce leakage current, and, consequently, power dissipation....... Mar 10 2004
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