As feature sizes of integrated circuits (ICs) continue to shrink, more sophisticated device models are needed for accurate IC design and simulation. This book presents a comprehensive discussion of a set of new and advanced device models that are applicable to current technology. The introduction of device models is accompanied by a good discussion of device physics. The authors have done a good job by not allowing complex mathematical models to bury the physical meaning. All the models presented are up to date. The emphasis is on silicon CMOS devices, but models for compound semiconductor devices such as MESFETs and polysilicon thin-film transistors (TFTs) are also given. The book contains a clear description of a new SPICE-type circuit simulator called AIM-SPICE, developed by the authors, which incorporates all the new models discussed by the book. The program, which can be ordered through the publisher, can be run under Windows and has friendly graphics features.

Chapter 1 gives a brief summary of fundamental device physics, including basic transport equations, p-n junctions, metal-semiconductor contact, and heterojunctions. Chapter 2 discusses Ebers-Moll and Gummel-Poon models for bipolar transistors. Chapter 3 deals with silicon MOSFETs with both n-channel and p-channel. The new device models, which include many short channel effects, specifically, mobility degradation, velocity saturation, and drain-induced barrier lowering, are discussed. The models for compound semiconductor devices and polysilicon TFTs are given in chapters 4 and 5, respectively. Chapter 6 contains the AIM-SPICE manual. Each chapter also includes a well-designed problem set to help readers digest the contents.

This book provides broad coverage of modern device models for VLSI circuit simulation, but a previous knowledge of semiconductor physics is required in order to fully utilize it. The book can serve as a textbook or a reference for senior undergraduates and graduates in device modeling. It certainly deserves a space on the bookshelf of practicing engineers in the field.